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中文标题 作者 论文ID 分类简称 发布时间
abstractPIM:一种面向处理内存的技术向后兼容编译流程 Adi Eliahu, Rotem Ben-Hur, Ronny Ronen, and Shahar Kvatinsky 2208.14472 cs.ET 2022-09-01
基于铁电场效应晶体管的强物理不可克隆函数:用于物联网安全的低功耗、高可靠性和可重构解决方案 Xinrui Guo, Xiaoyang Ma, Franz Muller, Kai Ni, Thomas Kampfe, Yongpan Liu, Vijaykrishnan Narayanan, Xueqing Li 2208.14678 cs.ET 2022-09-01
PIRM:处理赛道存储 Sebastien Ollivier, Stephen Longofono, Prayash Dutta, Jingtong Hu, Sanjukta Bhanja, Alex K. Jones 2108.01202 cs.ET 2022-08-02
使用自旋轨道力矩(SOT)磁阻随机存储器(MRAM)进行有状态逻辑运算 Barak Hoffer and Shahar Kvatinsky 2208.00741 cs.ET 2022-08-02
基于混合CMOS-OxRAM构件的量化神经网络映射的时分复用内存计算方案 Sandeep Kaur Kingra, Vivek Parmar, Manoj Sharma and Manan Suri 2206.00250 cs.ET 2022-07-29
处理器内存中的错误检测和修正(PiM) H"usrev C{i}lasun, Salonik Resch, Zamshed I. Chowdhury, Masoud Zabihi, Yang Lv, Brandon Zink, Jian-Ping Wang, Sachin S. Sapatnekar, Ulya R. Karpuzcu 2207.13261 cs.ET 2022-07-28
通过安全权重映射提升记忆阻变器计算系统的安全性 Minhui Zou, Junlong Zhou, Xiaotong Cui, Wei Wang, and Shahar Kvatinsky 2206.14498 cs.ET 2022-07-07
基于记忆电阻、自旋电子学和二维材料的设备以提升和补充计算硬件。 Dovydas Joksas, AbdulAziz AlMutairi, Oscar Lee, Murat Cubukcu, Antonio Lombardo, Hidekazu Kurebayashi, Anthony J. Kenyon, Adnan Mehonic 2203.06147 cs.ET 2022-07-04
IMRSim:一种用于交错磁记录技术的磁盘模拟器 Zhimin Zeng, Xinyu Chen, Laurence T Yang, Jinhua Cui 2206.14368 cs.ET 2022-06-30
单个缺陷原子电阻器中高和低电阻状态的建模 Yuvraj Misra and Tarun Kumar Agarwal 2206.05504 cs.ET 2022-06-14
区块链的节点级同步分析:同步还是分叉? Qin Hu, Minghui Xu, Shengling Wang, Shaoyong Guo 2206.06210 cs.ET 2022-06-14
神经锤:在记忆电阻交叉栅中引发位翻转 Felix Staudigl, Hazem Al Indari, Daniel Sch"on, Dominik Sisejkovic, Farhad Merchant, Jan Moritz Joseph, Vikas Rana, Stephan Menzel, Rainer Leupers 2112.01087 cs.ET 2022-06-09
技术和计算范式:超越摩尔定律? Daniel Etiemble 2206.03201 cs.ET 2022-06-08
CNTFET四进制乘法器效率低于相应的二进制乘法器 Daniel Etiemble 2206.03252 cs.ET 2022-06-08
功能化纳米颗粒对具有控制信号和发射机补给的 MC 的控制 Maximilian Sch"afer, Lukas Brand, Sebastian Lotter, Atakan B"uy"ukoglu, Franz Enzenhofer, Werner Haselmayr, Kathrin Castiglione, Dietmar Appelhans, Robert Schober 2206.01471 cs.ET 2022-06-06
一个开源的RRAM编译器 Dimitris Antoniadis, Andrea Mifsud, Peilong Feng, Timothy G. Constandinou 2111.05463 cs.ET 2022-06-02
分子通信中的容量分析:采用比例移位键控调制 M. Serkan Kopuzlu, M. Okan Araz, Ahmet R. Emirdagi, Murat Kuscu 2205.13317 cs.ET 2022-05-27
一种用于磁道纳米线条的多域磁隧道结构 Prayash Dutta (1), Albert Lee (2), Kang L. Wang (2), Alex K. Jones (3), and Sanjukta Bhanja (1) ((1) University of South Florida, (2) UCLA, (3) University of Pittsburgh) 2205.12494 cs.ET 2022-05-26
近似MRAM:适用于容错应用的高性能和低功耗计算与MRAM芯片 Farah Ferdaus, B. M. S. Bahar Talukder, and Md Tauhidur Rahman 2105.14151 cs.ET 2022-05-24
研究BTI、HCI和时间零的变异对神经形态脉冲事件生成电路的影响 Shaik Jani Babu, Rohit Singh, Siona Menezes Picardo, Nilesh Goel, and Sonal Singhal 2205.10152 cs.ET 2022-05-23
神经朋克革命。朝向人机融合3.0的认知系统黑客化 Max Talanov, Jordi Vallverdu, Andrew Adamatzky, Alexander Toschev, Alina Suleimanova, Alexey Leukhin, Ann Posdeeva, Yulia Mikhailova, Alice Rodionova, Alexey Mikhaylov, Alexander Serb, Sergey Shchanikov, Svetlana Gerasimova, Mohammad Mahdi Dehshibi, Alexander Hramov, Victor Kazantsev, Tatyana Tsoy, Evgeni Magid, Igor Lavrov, Victor Erokhin and Kevin Warwick 2205.06538 cs.ET 2022-05-16
双屏障MTJ中的热稳定性调节以提高低温STT-MRAM的能量效率 Esteban Garz''on, Raffaele De Rose, Felice Crupi, Lionel Trojman, Adam Teman, Marco Lanuzza 2204.09395 cs.ET 2022-05-10
精确且稳健低功率记忆阻抗神经网络的非理想性感知训练 Dovydas Joksas, Erwei Wang, Nikolaos Barmpatsalos, Wing H. Ng, Anthony J. Kenyon, George A. Constantinides, Adnan Mehonic 2112.06887 cs.ET 2022-05-06
3T-1R磁阻随机存取存储器(MRAM)用于RNG和低功耗内存的模拟写入和数字读取 Thomas Egler, Hans Dittmann, Sunanda Thunder and Artur Useinov 2204.14204 cs.ET 2022-05-02
基于$alpha$-IGZO纳米片和双层电阻存储器的超低功耗3D嵌入式卷积神经网络立方体 Sunanda Thunder, Parthasarathi Pal, Yeong-Her Wang, Po-Tsang Huang 2107.08178 cs.ET 2022-05-01